NATIONAL SEMICONDUCTOR CORP MMBT5551/D87Z | 搜芯易Sourcengine

NATIONAL SEMICONDUCTOR CORP MMBT5551/D87Z

生命周期状态
Discontinued
说明
Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
0.2
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.2
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
160
Power Dissipation Ambient-Max (W)
0.35
Collector-base Capacitance-Max (pF)
6
Transition Frequency-Nom (fT) (MHz)
100