ONSEMI MMBT4355 | 搜芯易Sourcengine

ONSEMI MMBT4355

生命周期状态
Discontinued
REACH
REACH compliant
说明
Small Signal Bipolar Transistor, 0.8A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
类别
Semiconductors Transistors Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1 V
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
Transistor Application
SWITCHING
Turn-on Time-Max (ton)
100 ns
Turn-off Time-Max (toff)
400 ns
DC Current Gain-Min (hFE)
75
Operating Temperature-Max
150 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
0.8 A
Power Dissipation-Max (Abs)
0.35 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
60 V
Collector-base Capacitance-Max
30 pF