ONSEMI MMBFJ309 | 搜芯易Sourcengine

ONSEMI MMBFJ309

生命周期状态
EOL
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Trans JFET N-CH 25V 3-Pin SOT-23 T/R
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
N-Channel
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Terminal Finish
Tin (Sn)
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
Transistor Application
AMPLIFIER
Feedback Cap-Max (Crss)
2.5 pF
DS Breakdown Voltage-Min
25 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30