ONSEMI MLD2N06CL | 搜芯易Sourcengine

ONSEMI MLD2N06CL

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 2A I(D), 58V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR, DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE, OVERVOLTAGE CLAMPED PROTECTION
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
2
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
58
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
80
Drain-source On Resistance-Max (ohm)
0.4
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED