Mitsubishi Electric Corp. ML64116R | 搜芯易Sourcengine

Mitsubishi Electric Corp. ML64116R

生命周期状态
Contact Mfr
说明
Laser Diode MQW-LD 800nm 40mW
类别
Semiconductors Optoelectronics Laser Diodes LASER DIODE

Shape
ROUND
Size (mm)
3
Configuration
SINGLE WITH BUILT-IN PHOTO DIODE
Mounting Feature
THROUGH HOLE MOUNT
Additional Feature
HIGH RELIABILITY
Number of Functions
1
Peak Wavelength (nm)
785
Output Power-Nom (mW)
30
Semiconductor Material
AlGaAs
Forward Current-Max (A)
0.01
Forward Voltage-Max (V)
2.5
Optoelectronic Device Type
LASER DIODE
Threshold Current-Max (mA)
50
Operating Temperature-Max (Cel)
60
Operating Temperature-Min (Cel)
-40