ONSEMI MJD44H11RL | 搜芯易Sourcengine

ONSEMI MJD44H11RL

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
40
Power Dissipation-Max (W)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Collector Current-Max (IC) (A)
8
Operating Temperature-Max (Cel)
140
Collector-emitter Voltage-Max (V)
80
Transition Frequency-Nom (fT) (MHz)
85
Time@Peak Reflow Temperature-Max (s)
30