Diodes Incorporated MJD41CQ-13 | 搜芯易Sourcengine

Diodes Incorporated MJD41CQ-13

生命周期状态
Active
RoHS
符合RoHS标准
说明
100V NPN Medium Power Transistor In To252 Automotive AEC-Q101
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE
JEDEC-95 Code
TO-252
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
VCEsat-Max (V)
1.5
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
2.7
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
6
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Collector-emitter Voltage-Max (V)
100
Collector-base Capacitance-Max (pF)
42
Transition Frequency-Nom (fT) (MHz)
3
Screening Level / Reference Standard
AEC-Q101; IATF 16949; MIL-STD-202
Time@Peak Reflow Temperature-Max (s)
30