ONSEMI MJD253-1 | 搜芯易Sourcengine

ONSEMI MJD253-1

生命周期状态
Discontinued
说明
Power Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
PNP
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
12.5
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
4
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
100
Transition Frequency-Nom (fT) (MHz)
40