Motorola,Inc. MJD200T4 | 搜芯易Sourcengine

Motorola,Inc. MJD200T4

生命周期状态
Transferred
说明
Power Bipolar Transistor, 5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-G2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
VCEsat-Max (V)
1.8
Case Connection
COLLECTOR
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
10
Transistor Element Material
SILICON
Turn-off Time-Max (toff) (ns)
190
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
25
Power Dissipation Ambient-Max (W)
12.5
Collector-base Capacitance-Max (pF)
80
Transition Frequency-Nom (fT) (MHz)
65