ONSEMI MJD122T4 | 搜芯易Sourcengine

ONSEMI MJD122T4

生命周期状态
EOL
说明
Darlington Transistors 8A 100V Bipolar
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e0
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn80Pb20)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
20
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Collector Current-Max (IC) (A)
8
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
100
Transition Frequency-Nom (fT) (MHz)
4
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED