ASI Semiconductor, Inc. MJ12002 | 搜芯易Sourcengine

ASI Semiconductor, Inc. MJ12002

生命周期状态
Active-Unconfirmed
说明
Power Bipolar Transistor, 2.5A I(C), 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBFM-P2
Configuration
SINGLE
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
1.11
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
2.5 A
Power Dissipation-Max (Abs)
75 W
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
2 MHz