NTE Electronics Inc. MJ10012 | 搜芯易Sourcengine

NTE Electronics Inc. MJ10012

生命周期状态
Active
RoHS
符合RoHS标准
说明
NPN Silicon Power Darlington Transistor
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBFM-P2
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-3
Package Shape
ROUND
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
2.5
Case Connection
COLLECTOR
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
2
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
20
Power Dissipation-Max (W)
175
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Collector Current-Max (IC) (A)
10
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
400
Collector-base Capacitance-Max (pF)
350
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED