Micro Commercial Components Corp. MIW50N65H-BP | 搜芯易Sourcengine

Micro Commercial Components Corp. MIW50N65H-BP

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IGBT
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
1.85 V
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-247
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
108 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
485 ns
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Collector Current-Max (IC)
50 A
Power Dissipation-Max (Abs)
250 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
650 V