Toshiba Corporation MIG50J904H | 搜芯易Sourcengine

Toshiba Corporation MIG50J904H

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDFM-P17
Configuration
COMPLEX
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
7
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
150 ns
Turn-off Time-Nom (toff)
500 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
50 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V