MIG50J7CSB1W
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.2 V
- Number of Elements1
- Operating Temperature-Max100 Cel
- Collector Current-Max (IC)50 A
- Collector-emitter Voltage-Max600 V
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MIG50J7CSB1W