Toshiba Corporation MIG25Q806H | 搜芯易Sourcengine

Toshiba Corporation MIG25Q806H

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
3.2 V
JESD-30 Code
R-PUFM-P24
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
UPPER
Number of Elements
3
Number of Terminals
24
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
35 A
Power Dissipation-Max (Abs)
200 W
Collector-emitter Voltage-Max
1200 V