Toshiba Corporation MIG20J902H | 搜芯易Sourcengine

Toshiba Corporation MIG20J902H

生命周期状态
Active
说明
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
4
Number of Elements
1
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
600