Toshiba Corporation MIG20J806HA | 搜芯易Sourcengine

Toshiba Corporation MIG20J806HA

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.7 V
JESD-30 Code
R-XUFM-P24
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Terminal Position
UPPER
Number of Elements
1
Number of Terminals
24
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
25 A
Power Dissipation-Max (Abs)
90 W
Collector-emitter Voltage-Max
600 V