Toshiba Corporation MIG10J855 | 搜芯易Sourcengine

Toshiba Corporation MIG10J855

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.8 V
JESD-30 Code
R-XDIP-T20
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
20
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
40 W
Collector-emitter Voltage-Max
600 V