MIG10J503H
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max (V)2.3
- Number of Elements1
- Collector Current-Max (IC) (A)10
- Operating Temperature-Max (Cel)100
- Collector-emitter Voltage-Max (V)600
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MIG10J503H