IXYS Corporation MIEB100W1200TEH | 搜芯易Sourcengine

IXYS Corporation MIEB100W1200TEH

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
IGBT MODULE 1200V 183A 630W E3
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
R-XUFM-X35
Configuration
Three Phase Inverter
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.2
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Number of Terminals
35
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
630
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
175
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
700
Collector Current-Max (IC) (A)
183
Operating Temperature-Max (Cel)
125
Operating Temperature-Min (Cel)
-40
Collector-emitter Voltage-Max (V)
1200
Screening Level / Reference Standard
UL RECOGNIZED