Motorola,Inc. MHPM7A10S120DC3 | 搜芯易Sourcengine

Motorola,Inc. MHPM7A10S120DC3

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-X24
Configuration
COMPLEX
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Additional Feature
FAST SOFT
Number of Elements
7
Number of Terminals
24
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
29 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V