MHPM6B20A60D
Motorola,Inc.
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PUFM-P16
- ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Number of Elements6
- Reference StandardUL RECOGNIZED
- Number of Terminals16
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationPOWER CONTROL
- Turn-on Time-Nom (ton)325 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)690 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)20 A
- Power Dissipation-Max (Abs)77 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max600 V
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MHPM6B20A60D