Motorola,Inc. MHPM6B15N120SL | 搜芯易Sourcengine

Motorola,Inc. MHPM6B15N120SL

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PUFM-P17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Position
UPPER
Number of Elements
6
Reference Standard
UL RECOGNIZED
Number of Terminals
17
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Turn-on Time-Nom (ton)
330 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
910 ns
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
10 A
Power Dissipation-Max (Abs)
50 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V