Mitsubishi Electric Corp. MH2M08ATNA-10H | 搜芯易Sourcengine

Mitsubishi Electric Corp. MH2M08ATNA-10H

生命周期状态
Discontinued
说明
SRAM Module, 2MX8, 100ns, CMOS
类别
Semiconductors Memory ICs SRAMs SRAM MODULE

ECCN
3A991.b.2.a
ECCN Governance
EAR
HTS Code
8542.32.00.41
SB Code
8542.32.00.40

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-XDMA-T36
Memory Width
8
Package Code
DIP
Output Enable
YES
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
SRAM MODULE
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Parallel/Serial
PARALLEL
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
DECODER AVAILABLE
Memory Organization
2MX8
Number of Functions
1
Number of Terminals
36
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
100
Number of Words Code
2M
Memory Density (bits)
16777216
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
2097152
Standby Current-Max (A)
0.00016
Standby Voltage-Min (V)
2
Supply Current-Max (mA)
138
Package Equivalence Code
DIP36,.6
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0