Mitsubishi Electric Corp. MH1M09A2JA-10 | 搜芯易Sourcengine

Mitsubishi Electric Corp. MH1M09A2JA-10

生命周期状态
Discontinued
说明
DRAM Module, 1MX9, 100ns, CMOS
类别
Semiconductors Memory ICs DRAMs DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Access Mode
STATIC COLUMN
JESD-30 Code
R-XSMA-T30
Memory Width
9
Package Code
SIMM
Package Shape
RECTANGULAR
Package Style
MICROELECTRONIC ASSEMBLY Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Memory IC Type
DRAM MODULE
Operating Mode
ASYNCHRONOUS
Refresh Cycles
512
Number of Ports
1
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
SINGLE
Additional Feature
RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
Memory Organization
1MX9
Number of Functions
1
Number of Terminals
30
Terminal Pitch (mm)
2.54
Access Time-Max (ns)
100
Number of Words Code
1M
Memory Density (bits)
9437184
Package Body Material
UNSPECIFIED
Output Characteristics
3-STATE
Seated Height-Max (mm)
21.082
Supply Voltage-Max (V)
5.5
Supply Voltage-Min (V)
4.5
Supply Voltage-Nom (V)
5
Number of Words (words)
1048576
Standby Current-Max (A)
0.0045
Supply Current-Max (mA)
540
Package Equivalence Code
SIP30,.2
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0