MGW12N120
ONSEMI
- 生命周期状态Active
- 说明IGBT, 20A, 1200V, N-CHANNEL
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-30 CodeR-PSFM-T3
- ConfigurationSINGLE
- JEDEC-95 CodeTO-247AE
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormTHROUGH-HOLE
- Case ConnectionCOLLECTOR
- Terminal FinishTIN LEAD
- Terminal PositionSINGLE
- Additional FeatureULTRAFAST, HIGH SPEED
- Number of Elements1
- Number of Terminals3
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Turn-on Time-Nom (ton)153 ns
- Gate-emitter Voltage-Max20 V
- Turn-off Time-Nom (toff)695 ns
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)20 A
- Power Dissipation-Max (Abs)125 W
- Transistor Element MaterialSILICON
- Gate-emitter Thr Voltage-Max8 V
- Collector-emitter Voltage-Max1200 V
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MGW12N120