Motorola,Inc. MGW12N120 | 搜芯易Sourcengine

Motorola,Inc. MGW12N120

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, TO-247AE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PSFM-T3
Configuration
SINGLE
JEDEC-95 Code
TO-247AE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
VCEsat-Max (V)
4.42
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
HIGH SPEED
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
20
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
8
Collector-emitter Voltage-Max (V)
1200
Power Dissipation Ambient-Max (W)
123