Motorola,Inc. MGSF1P02LT1 | 搜芯易Sourcengine

Motorola,Inc. MGSF1P02LT1

生命周期状态
Transferred
说明
Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
0.225
Drain Current-Max (ID) (A)
0.75
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Operating Temperature-Max (Cel)
150
Drain-source On Resistance-Max (ohm)
0.35