ONSEMI MGSF1N02ELT1 | 搜芯易Sourcengine

ONSEMI MGSF1N02ELT1

生命周期状态
Discontinued
说明
Small Signal Field-Effect Transistor, 0.75A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PDSO-G3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-236
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Additional Feature
LOGIC LEVEL COMPATIBLE
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
20 V
Operating Temperature-Max
150 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
0.4 W
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
235
Drain-source On Resistance-Max
0.085 ohm