ONSEMI MGS05N60D | 搜芯易Sourcengine

ONSEMI MGS05N60D

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 0.5A I(C), 600V V(BR)CES, N-Channel, TO-226AE
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
POWER CONTROL
JESD-30 Code
O-PBCY-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-226AE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e0
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
301
Collector Current-Max (IC) (A)
0.5
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
6
Collector-emitter Voltage-Max (V)
600