MGFS44V2527
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel, Junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.29.00.75
- SB Code8541.29.00.80
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)24 A
- Highest Frequency BandS BAND
- Transistor ApplicationAMPLIFIER
- Operating Temperature-Max175 Cel
- Transistor Element MaterialGALLIUM ARSENIDE
- Power Dissipation Ambient-Max100 W
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