Mitsubishi Electric Corp. MGFC45V6472A | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGFC45V6472A

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.75
SB Code
8541.29.00.80

JESD-30 Code
R-CDFM-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
8 A
Highest Frequency Band
C BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
10 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
125 W