MGFC44V7785
Mitsubishi Electric Corp.
- 生命周期状态Discontinued
- 说明RF Power Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- FET TechnologyJUNCTION
- Operating ModeDEPLETION MODE
- Qualification StatusNot Qualified
- Polarity/Channel TypeN-CHANNEL
- Drain Current-Max (ID)20 A
- Highest Frequency BandX BAND
- Transistor ApplicationAMPLIFIER
- Transistor Element MaterialGALLIUM ARSENIDE
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