Mitsubishi Electric Corp. MGFC39V5864 | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGFC39V5864

生命周期状态
Discontinued
说明
RF Power Field-Effect Transistor, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

FET Technology
METAL SEMICONDUCTOR
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
7.5 A
Operating Temperature-Max
175 Cel
Power Dissipation Ambient-Max
42.8 W