Mitsubishi Electric Corp. MGF4953A | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF4953A

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
S-CBCC-N4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
BOTTOM
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
12 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.01 A
Highest Frequency Band
K BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
2 V
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
0.05 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED