Mitsubishi Electric Corp. MGF4941CL | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF4941CL

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
Trans RF FET 0.055A 4-Pin Case GD-32
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

JESD-30 Code
S-PQMW-F4
Configuration
SINGLE
Package Shape
SQUARE
Package Style
MICROWAVE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
QUAD
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
7.5 dB
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Drain Current-Max (ID)
0.055 A
Highest Frequency Band
K BAND
Transistor Application
AMPLIFIER
Operating Temperature-Max
125 Cel
Transistor Element Material
GALLIUM ARSENIDE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Power Dissipation Ambient-Max
0.075 W
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED