Mitsubishi Electric Corp. MGF4934CM-75 | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF4934CM-75

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
RF Super Low Noise Ingaas High Electron Mobility Transistor
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11.5
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
INDIUM GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3
Operating Temperature-Max (Cel)
125
Power Dissipation Ambient-Max (W)
0.05