Mitsubishi Electric Corp. MGF4934CM | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF4934CM

生命周期状态
Active
RoHS
符合RoHS标准
说明
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Indium Gallium Arsenide, N-Channel, High Electron Mobility FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
R-PDSO-F4
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
HIGH ELECTRON MOBILITY
Operating Mode
DEPLETION MODE
DLA Qualification
Not Qualified
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
KU BAND
Power Gain-Min (Gp) (dB)
11.5
Drain Current-Max (ID) (A)
0.06
Transistor Element Material
INDIUM GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
125
Power Dissipation Ambient-Max (W)
0.05
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED