Mitsubishi Electric Corp. MGF1423B | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF1423B

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

FET Technology
METAL SEMICONDUCTOR
Power Gain-Min (Gp)
8 dB
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.08 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.24 W