Mitsubishi Electric Corp. MGF1412B | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF1412B

生命周期状态
Discontinued
说明
RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
FET Technology
METAL SEMICONDUCTOR
DLA Qualification
Not Qualified
Polarity/Channel Type
N-CHANNEL
Highest Frequency Band
X BAND
Power Gain-Min (Gp) (dB)
5
Drain Current-Max (ID) (A)
0.1
Transistor Element Material
GALLIUM ARSENIDE
DS Breakdown Voltage-Min (V)
3
Operating Temperature-Max (Cel)
175
Power Dissipation Ambient-Max (W)
0.36