Mitsubishi Electric Corp. MGF1302 | 搜芯易Sourcengine

Mitsubishi Electric Corp. MGF1302

生命周期状态
Contact Mfr
说明
Trans RF FET N-CH 0.1A 3-Pin GD-4
类别
Semiconductors Transistors RF Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
FET Technology
JUNCTION
Operating Mode
DEPLETION MODE
Case Connection
SOURCE
Terminal Position
RADIAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
4
Power Gain-Min (Gp)
5 dB
Qualification Status
Not Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
0.01 A
Highest Frequency Band
X BAND
Transistor Application
AMPLIFIER
DS Breakdown Voltage-Min
3 V
Operating Temperature-Max
175 Cel
Transistor Element Material
GALLIUM ARSENIDE
Power Dissipation Ambient-Max
0.36 W