ONSEMI MGB15N40CLT4G | 搜芯易Sourcengine

ONSEMI MGB15N40CLT4G

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 15A I(C), 440V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Position
SINGLE
Additional Feature
VOLTAGE CLAMPING
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AUTOMOTIVE IGNITION
Turn-on Time-Nom (ton)
6000 ns
Turn-off Time-Nom (toff)
20500 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
15 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
440 V
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED