Toshiba Corporation MG8N6ES1 | 搜芯易Sourcengine

Toshiba Corporation MG8N6ES1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 8A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-D17
Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
SOLDER LUG
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH SPEED
Number of Elements
6
Number of Terminals
17
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
350
Turn-off Time-Nom (toff) (ns)
850
Collector Current-Max (IC) (A)
8
Collector-emitter Voltage-Max (V)
1000