Toshiba Corporation MG50G2YL1 | 搜芯易Sourcengine

Toshiba Corporation MG50G2YL1

生命周期状态
Active
说明
Power Bipolar Transistor, 50A I(C), 1-Element
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max (V)
2
Fall Time-Max (ns)
2000
Number of Elements
1
Rise Time-Max (tr) (ns)
1000
DC Current Gain-Min (hFE)
100
Power Dissipation-Max (W)
300
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150