Toshiba Corporation MG30J6ES11 | 搜芯易Sourcengine

Toshiba Corporation MG30J6ES11

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Number of Elements
6
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
30 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V