MG300Q2YS60A
Toshiba Corporation
- 生命周期状态Discontinued
- 说明Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- VCEsat-Max2.8 V
- JESD-30 CodeR-XUFM-X11
- ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Package ShapeRECTANGULAR
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormUNSPECIFIED
- Case ConnectionISOLATED
- Terminal PositionUPPER
- Additional Feature1SCT2-P WITH BUILT IN FAULT-SIGNAL OUTPUT CKT(FO) AND OVER TEMPERATURE CKT(OT)
- Number of Elements2
- Number of Terminals11
- Qualification StatusNot Qualified
- Package Body MaterialUNSPECIFIED
- Polarity/Channel TypeN-CHANNEL
- Transistor ApplicationMOTOR CONTROL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)300 A
- Power Dissipation-Max (Abs)2800 W
- Transistor Element MaterialSILICON
- Collector-emitter Voltage-Max1200 V
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MG300Q2YS60A