Toshiba Corporation MG300Q1US21 | 搜芯易Sourcengine

Toshiba Corporation MG300Q1US21

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Configuration
SINGLE WITH BUILT-IN DIODE
Number of Elements
1
Qualification Status
Not Qualified
Polarity/Channel Type
N-CHANNEL
Collector Current-Max (IC)
300 A
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V