Toshiba Corporation MG300Q1US11 | 搜芯易Sourcengine

Toshiba Corporation MG300Q1US11

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

VCEsat-Max
2.7 V
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
Terminal Position
UPPER
Fall Time-Max (tf)
1000 ns
Number of Elements
1
Number of Terminals
4
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
POWER CONTROL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
300 A
Power Dissipation-Max (Abs)
2000 W
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
1200 V