Toshiba Corporation MG300N1US1 | 搜芯易Sourcengine

Toshiba Corporation MG300N1US1

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 300A I(C), 1000V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
5
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
HIGH SPEED SWITCHING
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1400
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
1200
Turn-off Time-Nom (toff) (ns)
1300
Collector Current-Max (IC) (A)
300
Operating Temperature-Max (Cel)
150
Collector-emitter Voltage-Max (V)
1000